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TGF3015-SM

Name: Qorvo TGF3015-SM
Brand: Qorvo
SKU: 772-TGF3015-SM
Price: 132.24 CAD
Availability: InStock

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Mouser #:

772-TGF3015-SM

Mfr. #:

TGF3015-SM

Mfr.:

Qorvo

Description:

GaN FETs .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN

Datasheet:

TGF3015-SM Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Qorvo TGF3015-SM

In Stock: 91

Stock:: 91 Can Ship Immediately

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Factory Lead-Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$132.24	$132.24
	$94.88	$2,372.00
	$85.93	$8,593.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	QFN-EP-16
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	32 V
Id - Continuous Drain Current:	557 mA
Pd - Power Dissipation:	15.3 W
Brand:	Qorvo
Configuration:	Single
Development Kit:	TGF3015-SM-EVB1
Gain:	17.1 dB
Maximum Operating Frequency:	3 GHz
Minimum Operating Frequency:	30 MHz
Moisture Sensitive:	Yes
Output Power:	11 W
Packaging:	Tray
Product Type:	GaN FETs
Series:	TGF3015
Factory Pack Quantity:	100
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Vgs - Gate-Source Breakdown Voltage:	- 2.7 V
Part # Aliases:	TGF3015 1120419
Unit Weight:	6.745 g

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Datasheet

TGF3015-SM Datasheet (PDF)

PCN

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CAHTS:: 8542330000
CNHTS:: 8541290000
USHTS:: 8542390090
JPHTS:: 8542330996
KRHTS:: 8532331000
MXHTS:: 8542330201
ECCN:: EAR99

TGF3015-SM GaN HEMT Input-Matched Transistor

Qorvo TGF3015-SM Input-Matched Transistor is a 10W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT that operates from 30MHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3mm x 3mm package that saves real estate of already space-constrained handheld radios.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.