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SIHFPS37N50A-GE3

Name: Vishay SIHFPS37N50A-GE3
Brand: Vishay / Siliconix
SKU: 78-SIHFPS37N50A-GE3
Price: 12.13 CAD
Availability: OutOfStock

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Mouser #:

78-SIHFPS37N50A-GE3

Mfr. #:

SIHFPS37N50A-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs SPR247 500V 36A N-CH MOSFET

Datasheet:

SIHFPS37N50A-GE3 Datasheet

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Availability

Stock:: 0

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On Order:: 1,776

Expected 2026-07-06
Factory Lead-Time:: 51

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$12.13	$12.13
	$8.52	$85.20
	$7.09	$709.00
	$6.32	$3,033.60
	$5.89	$5,654.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	Super-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	130 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	180 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	446 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	IL
Fall Time:	80 ns
Forward Transconductance - Min:	20 S
Product Type:	MOSFETs
Rise Time:	98 ns
Series:	SIHFPS
Factory Pack Quantity:	480
Subcategory:	Transistors
Transistor Type:	Power MOSFET
Typical Turn-Off Delay Time:	52 ns
Typical Turn-On Delay Time:	23 ns

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CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SIHFPS Super-247 Power MOSFET

Vishay / Siliconix SIHFPS Super-247 Power MOSFET offers an improved gate with an avalanche and dynamic dV/dt ruggedness. The avalanche voltage, current, and capacitance are fully characterized. The SIHFPS Super-247 Power MOSFETs have an enhanced body diode dV/dt capability and are ideal for high-speed and hard-switching applications.