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MMBT4401-13-F

Name: Diodes Incorporated MMBT4401-13-F
Brand: Diodes Incorporated
SKU: 621-MMBT4401-13-F
Price: 0.2 CAD
Availability: InStock

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Mouser #:

621-MMBT4401-13-F

Mfr. #:

MMBT4401-13-F

Mfr.:

Diodes Incorporated

Description:

Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN

Datasheet:

MMBT4401-13-F Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diodes Incorporated MMBT4401-13-F

In Stock: 131,147

Stock:: 131,147 Can Ship Immediately

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Factory Lead-Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 10000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.20	$0.20
	$0.124	$1.24
	$0.078	$7.80
	$0.057	$28.50
	$0.043	$43.00
	$0.037	$185.00
Full Reel (Order in multiples of 10000)
	$0.021	$210.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part #:

MMBT4401-7-F

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$0.20

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Transistor Polarity:	NPN
Configuration:	Single
Maximum DC Collector Current:	600 mA
Collector- Emitter Voltage VCEO Max:	40 V
Collector- Base Voltage VCBO:	60 V
Emitter- Base Voltage VEBO:	6 V
Collector-Emitter Saturation Voltage:	750 mV
Pd - Power Dissipation:	310 mW
Gain Bandwidth Product fT:	250 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
DC Collector/Base Gain hfe Min:	20 at 100 uA, 1 V
DC Current Gain hFE Max:	300 at 150 mA, 1 V
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	10000
Subcategory:	Transistors
Unit Weight:	8 mg

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Datasheet

MMBT4401-13-F Datasheet (PDF)

PCN

Environmental Compliance (PDF)

CAHTS:: 8541290000
CNHTS:: 8541210000
USHTS:: 8541210075
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

MMBT4401 Bipolar Junction Transistor

Diodes Incorporated MMBT4401 Bipolar Junction Transistor (BJT) with epitaxial planar die construction is a 40V NPN small signal transistor. The MMBT4401 is qualified to AEC-Q101 standards for high reliability, available in the SOT23 package. This transistor is constructed from molded plastic "Green" compound and complies with UL94V-0 flammability rating. Diodes Incorporated MMBT4401 features a wide storage and operating temperature range of -55ºC to 150ºC. This BJT is RoHS compliant. The MMBT4401 transistor is ideal for medium power amplification and switching.