It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NTH4L028N170M1

Name: onsemi NTH4L028N170M1
Brand: onsemi
SKU: 863-NTH4L028N170M1
Price: 57.37 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

863-NTH4L028N170M1

Mfr. #:

NTH4L028N170M1

Mfr.:

onsemi

Description:

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L

Datasheet:

NTH4L028N170M1 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about onsemi NTH4L028N170M1

In Stock: 128

Stock:: 128

Can Ship Immediately

An unexpected error occurred. Please try again later.
On Order:: 450

Expected 2026-02-20
Factory Lead-Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$57.37	$57.37
	$43.54	$435.40

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	81 A
Rds On - Drain-Source Resistance:	40 mOhms
Vgs - Gate-Source Voltage:	- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	200 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	535 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance - Min:	31 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	18 ns
Series:	NTH4L028N170M1
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	121 ns
Typical Turn-On Delay Time:	47 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NTH4L028N170M1 Datasheet

Material Composition Disclosure

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

NTH4L028N170M1 1700V EliteSiC MOSFET

onsemi NTH4L028N170M1 1700V EliteSiC MOSFET provides reliable, high-efficiency performance for energy infrastructure and industrial drive applications. The onsemi EliteSiC MOSFET features planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This device has optimum performance when driven with a 20V gate drive but also works well with an 18V gate drive.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.