APS6408L-3OC-BA

AP Memory
878-APS6408L-3OC-BA
APS6408L-3OC-BA

Mfr.:

Description:
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 3V, Ind. Temp., BGA24 (OctaRAM for Renesas RA6M RZ/A SoC)

ECAD Model:
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In Stock: 284

Stock:
284 Can Ship Immediately
Factory Lead-Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$3.24 $3.24
$2.96 $29.60
$2.88 $72.00
$2.82 $141.00
$2.76 $276.00
$2.67 $667.50
$2.60 $1,300.00
$2.59 $2,590.00
$2.46 $6,150.00

Product Attribute Attribute Value Select Attribute
AP Memory Technology
Product Category: DRAM
RoHS:  
PSRAM (Pseudo SRAM)
64 Mbit
8 bit
200 MHz
BGA-24
8 M x 8
2.7 V
3.6 V
- 40 C
+ 85 C
IoT RAM
Tray
Brand: AP Memory
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 4800
Subcategory: Memory & Data Storage
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Attributes selected: 0

CAHTS:
8542320020
CNHTS:
8542329010
USHTS:
8542320002
MXHTS:
8542320299
ECCN:
EAR99

APS6408L-3OC-BA DDR Octal SPI PSRAM

AP Memory APS6408L-3OC-BA Double Data Rate (DDR) Octal SPI PSRAM is designed with auto temperature-compensated self-refresh by the built-in temperature sensor and partial array self-refresh. This octal PSRAM features software reset, reset pin, and an ultra-low power half-sleep mode with data retention. The APS6408L-3OC-BA PSRAM offers a clock rate of up to 133MHz 266Mb/s read/write throughput operating within a 2.7V to 3.6V (VDD) single supply voltage range. This octal PSRAM holds 64MB in capacity and is organized in an 8M x 8-bit configuration. It utilizes a page size of 1024 bytes, and the column addresses range from AY0 to AY9, while row addresses span from AX0 to AX12.