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SIHH070N60EF-T1GE3

Name: Vishay SIHH070N60EF-T1GE3
Brand: Vishay / Siliconix
SKU: 78-SIHH070N60EFT1GE3
Price: 13.14 CAD
Availability: InStock

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Mouser #:

78-SIHH070N60EFT1GE3

Mfr. #:

SIHH070N60EF-T1GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs 600V PowerPAK 8x8 N-CHANNEL

Datasheet:

SIHH070N60EF-T1GE3 Datasheet

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Learn more about Vishay / Siliconix SIHH070N60EF-T1GE3

In Stock: 3,179

Stock:: 3,179 Can Ship Immediately

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Factory Lead-Time:: 2 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$13.14	$13.14
	$8.04	$80.40
	$7.13	$713.00
	$7.10	$3,550.00
	$7.08	$7,080.00
Full Reel (Order in multiples of 3000)
	$6.09	$18,270.00
6,000	Quote

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PowerPAK-8 x 8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	71 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	50 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	202 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	38 ns
Forward Transconductance - Min:	10.5 S
Product Type:	MOSFETs
Rise Time:	79 ns
Series:	SIHH EF
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	55 ns
Typical Turn-On Delay Time:	36 ns
Unit Weight:	50 mg

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Filter Document:

CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

4th Generation EF Series MOSFETs

Vishay / Siliconix 4th Generation EF Series MOSFETs offer an extremely low figure-of-merit (FOM) rating for high-performance switching and high efficiency. The MOSFET FOM is calculated as ON-resistance (R_(DS)ON) multiplied by gate charge (Q_g). Built on Vishay 4th generation super-junction technology, these MOSFETs feature a low typical ON-resistance range of 0.088Ω to 0.225Ω at V_GS=10V and a gate charge down to 21nC. For improved switching performance, these devices provide low effective output capacitances (Co_(er) and Co_(tr)). These values translate into reduced conduction and switching losses to save energy. Vishay / Siliconix 4th Generation EF Series MOSFETs are offered in PowerPAK® 8x8 and TO-220AB packages. The series is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.

SiHH070N60EF Power MOSFET

Vishay SiHH070N60EF Power MOSFET features 4th generation E series technology, low Figure-of-Merit (FOM), and low effective capacitance. This power MOSFET is avalanche energy rated (UIS) and reduces switching and conduction losses. Typical applications include server and telecom power supplies, switch-mode power supplies (SMPS), power factor correction (PFC) power supplies, motor drives, battery chargers, and welding.