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NSVMMUN2231LT1G

Name: onsemi NSVMMUN2231LT1G
Brand: onsemi
SKU: 863-NSVMMUN2231LT1G
Price: 0.3 CAD
Availability: InStock

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Mouser #:

863-NSVMMUN2231LT1G

Mfr. #:

NSVMMUN2231LT1G

Mfr.:

onsemi

Description:

Digital Transistors SS SOT23 BR XSTR NPN 50V

Datasheet:

NSVMMUN2231LT1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NSVMMUN2231LT1G

In Stock: 27,582

Stock:: 27,582 Can Ship Immediately

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Factory Lead-Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$0.302	$0.30
	$0.177	$1.77
	$0.108	$10.80
	$0.078	$39.00
	$0.068	$68.00
Full Reel (Order in multiples of 3000)
	$0.059	$177.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Digital Transistors
RoHS:
Configuration:	Single
Transistor Polarity:	NPN
Typical Input Resistor:	2.2 kOhms
Typical Resistor Ratio:	1
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Maximum Operating Frequency:	10 kHz
Collector- Emitter Voltage VCEO Max:	50 V
Continuous Collector Current:	100 mA
Pd - Power Dissipation:	400 mW
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	MMUN2231L
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Channel Mode:	Depletion
Operating Temperature Range:	- 55 C to + 150 C
Product Type:	Digital Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors

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Datasheet

NSVMMUN2231LT1G Datasheet

Material Composition Disclosure

Compliance Codes

CAHTS:: 8541210000
CNHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Malaysia

The country is subject to change at the time of shipment.

MMUN2231L NPN Bipolar Digital Transistor

onsemi MMUN2231L NPN Bipolar Digital Transistor is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a single transistor with a monolithic bias network. This BRT is comprised of two resistors, a series base resistor (2.2kΩ) and a base-emitter resistor (2.2kΩ), and integrates them into a single device. The BRT reduces the component count and board space and simplifies the circuit design. This BRT is AEC-Q101 qualified and PPAP capable. The BRT is Pb and halogen/BFR-free and RoHS compliant. Typical applications include reverse battery protection, DC-DC converter output driver, and high-speed switching.