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NTH4L020N090SC1

Name: onsemi NTH4L020N090SC1
Brand: onsemi
SKU: 863-NTH4L020N090SC1
Price: 35.7 CAD
Availability: InStock

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Mouser #:

863-NTH4L020N090SC1

Mfr. #:

NTH4L020N090SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOSFET 900V TO247-4L 20MOHM

Datasheet:

NTH4L020N090SC1 Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTH4L020N090SC1

In Stock: 2,247

Stock:: 2,247 Can Ship Immediately

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Factory Lead-Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$35.70	$35.70
	$28.80	$288.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	900 V
Id - Continuous Drain Current:	118 A
Rds On - Drain-Source Resistance:	28 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	196 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	484 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	14 ns
Forward Transconductance - Min:	49 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	28 ns
Series:	NTH4L020N090SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	54 ns

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Datasheet

NTH4L020N090SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290095
ECCN:: EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

NTH4L020N090SC1 Silicon Carbide (SiC) MOSFET

onsemi NTH4L020N090SC1 Silicon Carbide (SiC) MOSFET provides superior switching performance and higher reliability than silicon. The onsemi MOSFET features low ON resistance and a compact chip size to ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.