It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NTMTS0D7N04CTXG

Name: onsemi NTMTS0D7N04CTXG
Brand: onsemi
SKU: 863-NTMTS0D7N04CTXG
Price: 4.9 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

863-NTMTS0D7N04CTXG

Mfr. #:

NTMTS0D7N04CTXG

Mfr.:

onsemi

Description:

MOSFETs AFSM T6 40V SG NCH

Datasheet:

NTMTS0D7N04CTXG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about onsemi NTMTS0D7N04CTXG

In Stock: 1,637

Stock:: 1,637 Can Ship Immediately

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$4.90	$4.90
	$3.78	$37.80
	$2.64	$264.00
	$2.33	$1,165.00
	$1.94	$1,940.00
Full Reel (Order in multiples of 3000)
	$1.89	$5,670.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	DFNW-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	420 A
Rds On - Drain-Source Resistance:	670 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	140 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	205 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	20.4 ns
Forward Transconductance - Min:	200 S
Product Type:	MOSFETs
Rise Time:	18.1 ns
Series:	NTMTS0D7N04C
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	61 ns
Typical Turn-On Delay Time:	28.9 ns
Unit Weight:	319.280 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NTMTS0D7N04CTXG Datasheet

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

NTMTS0D7N04C 40V N-Channel Power MOSFET

onsemi NTMTS0D7N04C 40V N-Channel Power MOSFET is produced using onsemi’s advanced Power Trench process that incorporates Shielded Gate technology. This process minimizes on-state resistance while maintaining superior switching performance with a leading soft body diode. The onsemi NTMTS0D7N04C offers 420A continuous drain current (I_D) and a low drain-to-source on-resistance (R_DS(on) of 0.67mΩ (max.).