NTH4L Silicon Carbide (SiC) MOSFETs

onsemi NTH4L Silicon Carbide (SiC) MOSFETs are a family of 1200V M3S planar SiC MOSFETs. The MOSFETs feature ultra-low gate charges and low switching losses. Some MOSFET models provide high-speed switching with low capacitance ratings. The NTH4L series is 100% avalanche tested and RoHS compliant. The onsemi NTH4L SiC MOSFETs are ideal for various power applications, including solar inverters, electric vehicle (EV) charging stations, uninterruptible power supplies (UPS), energy storage systems, and switch-mode power supplies (SMPS).

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Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename

onsemi SiC MOSFETs DISCRETE SIC M3S 1200V 13
Datasheet
246In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 151 A 20 mOhms - 10 V, + 22 V 4.4 V 254 nC - 55 C + 175 C 682 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 22MOHM 1
Datasheet
1,634In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 68 A 30 mOhms - 10 V, + 22 V 4.4 V 151 nC - 55 C + 175 C 352 W Enhancement EliteSiC