CGHV38375F

MACOM
941-CGHV38375F
CGHV38375F

Mfr.:

Description:
GaN FETs Amplifier, 375W, 2.7-3.8GHz, GaN, 50V

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.
This product may require additional documentation to export from the United States.

In Stock: 5

Stock:
5 Can Ship Immediately
Factory Lead-Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$1,788.82 $1,788.82

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
Shipping Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
Screw Mount
440226
N-Channel
125 V
24 A
- 40 C
+ 125 C
Brand: MACOM
Gain: 11 dB
Maximum Operating Frequency: 3.75 GHz
Minimum Operating Frequency: 2.75 GHz
Output Power: 400 W
Packaging: Tray
Product Type: GaN FETs
Factory Pack Quantity: 10
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900

CGHV38375F 400W IM GaN on SiC Transistor

MACOM CGHV38375F 400W Internally Matched GaN on SiC Transistor (IM-FET) offers 400W HPA matched to 50Ω at both input and output ports. The module operates from 2.75GHz to 3.75GHz, expanding coverage over the entire S-band radar band. MACOM CGHV38375F 400W IM GaN on SiC Transistor is a high-power amplifier supporting a >10dB of significant signal gain and 40% power-added efficiency. The CGHV38375F is ideal as a high-power building block supporting both pulsed and CW radar applications.