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RS6N120BHTB1

Name: ROHM Semiconductor RS6N120BHTB1
Brand: ROHM Semiconductor
SKU: 755-RS6N120BHTB1
Price: 5.66 CAD
Availability: OutOfStock

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Mouser #:

755-RS6N120BHTB1

Mfr. #:

RS6N120BHTB1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Nch 80V 135A, HSOP8, Power MOSFET: RS6N120BH is a power MOSFET with low-on resistance and high power package, suitable for switching.

Datasheet:

RS6N120BHTB1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RS6N120BHTB1

Availability

Stock:: 0

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On Order:: 2,500

Expected 2026-05-28
Factory Lead-Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$5.66	$5.66
	$3.69	$36.90
	$2.88	$288.00
	$2.42	$1,210.00
	$2.11	$2,110.00
Full Reel (Order in multiples of 2500)
	$2.11	$5,275.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	HSOP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	135 A
Rds On - Drain-Source Resistance:	3.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	53 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	104 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	35 ns
Forward Transconductance - Min:	42 S
Product Type:	MOSFETs
Rise Time:	47 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	73 ns
Typical Turn-On Delay Time:	32 ns

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Datasheet

RS6N120BHTB1 Datasheet

Specification Sheets

Datasheet - Chinese (English language)

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CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

RS6/RH6 Cu-Clip Package N-Channel Power MOSFETs

ROHM Semiconductor RS6/RH6 Cu-Clip Package N-Channel Power MOSFETs enable high current handling capability with reduced package resistance. The HSOP-8 and HSMT-8 packaged components provide simultaneous low ON-resistance and gate charge capacitance, minimizing energy loss. Operating within a -55°C to +150°C temperature range, these MOSFETs are ideal for drive applications that operate on 24V/36V/48V power supplies.

RS6N120BH N-Channel Power MOSFET

ROHM Semiconductor RS6N120BH N-Channel Power MOSFET is a compact low-loss MOSFET featuring a Cu clip structure contributing to high-efficiency operation. The system increases current capacity while reducing package resistance. This feature makes the RS6N120BH ideal for drive applications that operate on 24V/36V/48V power supplies.