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STL25N60M2-EP

Name: STMicroelectronics STL25N60M2-EP
Brand: STMicroelectronics
SKU: 511-STL25N60M2-EP
Price: 1.83 CAD
Availability: OutOfStock

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Mouser #:

511-STL25N60M2-EP

Mfr. #:

STL25N60M2-EP

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8

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Datasheet:

STL25N60M2-EP Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead-Time:: 14 Weeks Estimated factory production time.

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Minimum: 3000 Multiples: 3000

Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	$1.83	$5,490.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PowerFLAT-8x8-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	16 A
Rds On - Drain-Source Resistance:	206 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	16 ns
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	10 ns
Series:	STL25N60M2-EP
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	61 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	180 mg

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Datasheet

STL25N60M2-EP Datasheet (PDF)

PCN

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129010
KRHTS:: 8541299000
TARIC:: 8542319000
MXHTS:: 8542310302
ECCN:: EAR99

STL25N60M2-EP N-Channel Power MOSFET

STMicroelectronics STL25N60M2-EP N-Channel Power MOSFET is developed using MDmesh™ M2 EP enhanced performance technology. STMicroelectronics STL25N60M2-EP is housed in a PowerFLAT™ 8x8 HV package with a strip layout and improved vertical structure for low on-resistance and optimized switching characteristics. The MOSFET is suitable for demanding high frequency converters and has very low turn-off switching losses.