NDSH20120C-F155

onsemi
863-NDSH20120C-F155
NDSH20120C-F155

Mfr.:

Description:
SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO

Datasheet:
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In Stock: 593

Stock:
593 Can Ship Immediately
Factory Lead-Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$14.34 $14.34
$9.84 $98.40
$7.40 $740.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC Schottky Diodes
RoHS:  
REACH - SVHC:
Through Hole
TO-247-2
Single
26 A
1.2 kV
1.75 V
119 A
2.06 uA
- 55 C
+ 175 C
NDSH20120C-F155
Tube
Brand: onsemi
Pd - Power Dissipation: 214 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 450
Subcategory: Diodes & Rectifiers
Tradename: EliteSiC
Vr - Reverse Voltage: 1.2 kV
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Attributes selected: 0

Datasheet

CAHTS:
8541100090
CNHTS:
8541100000
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH20120C-F155 Silicon Carbide Schottky Diode

onsemi NDSH20120C-F155 Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. NDSH20120C-F155 features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling.

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