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PBSS4310PAS-QX

Name: Nexperia PBSS4310PAS-QX
Brand: Nexperia
SKU: 771-PBSS4310PAS-QX
Price: 0.83 CAD
Availability: OutOfStock

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Mouser #:

771-PBSS4310PAS-QX

Mfr. #:

PBSS4310PAS-QX

Mfr.:

Nexperia

Description:

Bipolar Transistors - BJT SOT1061 10V 3A NPN BJT

Datasheet:

PBSS4310PAS-QX Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PBSS4310PAS-QX

Availability

Stock:: 0

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On Order:: 8,871

Expected 2027-04-02
Factory Lead-Time:: 53

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.835	$0.84
	$0.534	$5.34
	$0.338	$33.80
	$0.235	$117.50
	$0.196	$196.00
Full Reel (Order in multiples of 3000)
	$0.154	$462.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	DFN-2020D-3
Transistor Polarity:	NPN
Configuration:	Single
Maximum DC Collector Current:	3 A
Collector- Emitter Voltage VCEO Max:	10 V
Collector- Base Voltage VCBO:	10 V
Emitter- Base Voltage VEBO:	8 V
Collector-Emitter Saturation Voltage:	55 mV
Pd - Power Dissipation:	1.54 W
Gain Bandwidth Product fT:	80 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Continuous Collector Current:	3 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
DC Collector/Base Gain hfe Min:	325
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors
Part # Aliases:	934663832115

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Datasheet

PBSS4310PAS-QX Datasheet (PDF)

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

PBSS4310PAS-Q NPN Low VCEsat Transistor

Nexperia PBSS4310PAS-Q NPN Low VCEsat Transistor features a very low collector-emitter saturation voltage, high collector current capability, and high efficiency due to less heat generation. The PBSS4310PAS-Q is housed in an ultra-thin SOT1061D (DFN2020D-3) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and side-wettable flanks (SWF). The leadless small SMD plastic package with solderable side pads reduces printed circuit board (PCB) area requirements.

BJT DFN-Packaged Power Bipolar Transistors

Nexperia BJT DFN-Packaged Power Bipolar Transistors offer a small form factor that uses about 75% less board space and allows more design flexibility. These bipolar transistors feature reduced parasitic inductance and capacitance with an improved, low thermal resistance, enabling higher reliability. The BJT components are ideal for applications where space is at a premium. Applications include mobile devices, wearables, automotive sensors, and camera modules.