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IRLHS6242TRPBF

Name: Infineon IRLHS6242TRPBF
Brand: Infineon Technologies
SKU: 942-IRLHS6242TRPBF
Price: 1.02 CAD
Availability: InStock

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Mouser #:

942-IRLHS6242TRPBF

Mfr. #:

IRLHS6242TRPBF

Mfr.:

Infineon Technologies

Description:

MOSFETs 20V 1 N-CH HEXFET 11.7mOhms 14nC

Datasheet:

IRLHS6242TRPBF Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IRLHS6242TRPBF

In Stock: 709

Stock:: 709

Can Ship Immediately

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On Order:: 4,000

Expected 2026-03-19
Factory Lead-Time:: 20

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 4000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.02	$1.02
	$0.577	$5.77
	$0.431	$43.10
	$0.361	$180.50
	$0.326	$326.00
	$0.295	$590.00
Full Reel (Order in multiples of 4000)
	$0.262	$1,048.00
	$0.211	$1,688.00
	$0.208	$4,992.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PQFN 2x2 (DFN2020)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	22 A
Rds On - Drain-Source Resistance:	11.7 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	14 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	9.6 W
Channel Mode:	Enhancement
Tradename:	StrongIRFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance - Min:	36 S
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	N-Channel
Factory Pack Quantity:	4000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	5.8 ns
Unit Weight:	10.430 mg

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Datasheet

IRLHS6242TRPBF Datasheet (PDF)

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CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Ultra Compact PQFN HEXFET® Power MOSFETs

Infineon Ultra Compact PQFN HEXFET® Power MOSFETs deliver an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smartphones, tablet PCs, camcorders, digital still cameras, notebook PC, server and network communications equipment.

Inductive Wireless Charging Solutions

Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits of wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging, whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.

Wireless Charging Solutions

Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Power MOSFETs

Infineon pioneered HEXFET power MOSFET technology, developing and introducing the first hexagonal topology MOSFETs in 1979. These developments were granted a broad patent just four years later, and since that time, most MOSFET manufacturers have licensed the designs and processes to enter this marketplace. IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™, and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages, increasing power density. Compatible with standard surface-mount soldering techniques, IR's FlipFET® packaging technology offers a 100% silicon-to-footprint ratio with the same performance as a conventional package three times as big, making it the ideal solution for portable devices such as phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double the current density while cutting thermal management costs in half in high-current circuits that power next-generation microprocessors.