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MRFE6VS25GN-960

Name: NXP MRFE6VS25GN-960
Brand: NXP Semiconductors
SKU: 771-MRFE6VS25GN-960
Price: 2441.23 CAD
Availability: InStock

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Mouser #:

771-MRFE6VS25GN-960

Mfr. #:

MRFE6VS25GN-960

Mfr.:

NXP Semiconductors

Description:

RF Development Tools MRFE6VS25GN 960-1215 MHz Reference Circuit

Datasheet:

MRFE6VS25GN-960 Datasheet (PDF)

More Information

Learn more about NXP Semiconductors MRFE6VS25GN-960

In Stock: 2

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Factory Lead-Time:: 1 Week Estimated factory production time for quantities greater than shown.

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Qty.	Unit Price	Ext. Price
	$2,441.23	$2,441.23

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	NXP
Product Category:	RF Development Tools
RoHS:
Product:	Reference Design Boards
Type:	RF Transistor
Tool Is For Evaluation Of:	MRFE6VS25N
Frequency:	960 MHz to 1.215 GHz
Brand:	NXP Semiconductors
Operating Supply Voltage:	50 V
Product Type:	RF Development Tools
Series:	MRFE6VS25N
Factory Pack Quantity:	1
Subcategory:	Development Tools
Part # Aliases:	935392203598
Unit Weight:	453.592 g

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Datasheet

MRFE6VS25GN-960 Datasheet (PDF)

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USHTS:: 9030908050
ECCN:: EAR99

MRFE6VS25GN Reference Circuit

NXP Semiconductors MRFE6VS25GN Reference Circuit is designed to allow rapid evaluation and prototyping of the MRFE6VS25 RF Power LDMOS Transistor. The MRFE6VS25 is designed for both narrowband and broadband ISM, broadcast, and aerospace applications operating at frequencies from 1.8MHz to 2000MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications with high VSWRs.

RF Reference Circuits

NXP Semiconductors RF Reference Circuits are ease of use solutions designed to accelerate prototyping RF applications for faster time to market. These compact reference circuits offer design reuse across frequencies using the same PCB layout, enabling RF designers to quickly generate new power amplifier designs for multiple frequencies.