LSIC1MO120G0040

IXYS
576-LSIC1MO120G0040
LSIC1MO120G0040

Mfr.:

Description:
SiC MOSFETs TO247 1.2KV 50A N-CH SIC

ECAD Model:
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In Stock: 431

Stock:
431 Can Ship Immediately
Factory Lead-Time:
29 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 431 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$42.56 $42.56
$31.08 $310.80
$31.06 $3,106.00
$29.88 $13,446.00
5,400 Quote

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
70 A
50 mOhms
- 5 V, + 20 V
4 V
175 nC
- 55 C
+ 175 C
357 W
Enhancement
Brand: IXYS
Configuration: Single
Fall Time: 8 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 9 ns
Series: LSIC1MO120G0xxx
Factory Pack Quantity: 450
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 13 ns
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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

LSIC1MO120G0x N-Channel SiC MOSFETs

IXYS LSIC1MO120G0x N-Channel SiC MOSFETs offer a 1200V drain-source voltage rating, 25mΩ to 160mΩ resistance range, and 14A to 70A currents. These MOSFETs are optimized for high-frequency, high-efficiency applications, and feature ultra-low on-resistance, low gate resistance, and normally-off operations at all temperatures. The IXYS LSIC1MO120G0x N-Channel SiC MOSFETs are ideal for solar inverters, switch-mode power supplies, motor drives, battery chargers, and more.