CMPA0527005F GaN HEMT

MACOM CMPA0527005F Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) is based on monolithic microwave integrated circuits (MMICs) for power amplifiers. The CMPA0527005F GaN MMICs feature a 50V operating voltage, a frequency range of 0.5GHz to 2.7GHz, and a small signal gain of 20dB. The device is matched to 50Ω at the input and unmatched at the output. MACOM CMPA0527005F GaN HEMT is intended as a pre-driver from 500MHz to 2700MHz and is available in a 6-leaded flange package.