High Voltage Reverse Conducting (BiMOSFET™) IGBTs

IXYS High Voltage Series 2500V to 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs. These high-voltage devices feature a positive voltage temperature coefficient of both of its saturation voltage and the forward voltage drop of its intrinsic diode, making them ideal for parallel operation. The “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

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Results: 19
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Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS Product Type
Technology
Mounting Style
Package / Case
IXYS IGBTs 3600V/125A Reverse Conducting IGBT
Datasheet
448In Stock
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-PLUS-HV-3
IXYS IGBTs TO268 3KV 42A IGBT
Datasheet
2,787In Stock
Min.: 1
Mult.: 1

IGBT Transistors Si SMD/SMT D3PAK-3 (TO-268-3)

IXYS IGBTs Disc IGBT BiMSFT-VeryHiVolt TO-247AD
Datasheet
281In Stock
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3

IXYS IGBTs PLUS247 2500V 25A IGBT
Datasheet
224In Stock
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
IXYS IGBTs 3600V/45A Reverse Conducting IGBT
Datasheet
307In Stock
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole ISOPLUS i4-PAC-3
IXYS IGBTs TO247 2500V 42A HI GAIN
Datasheet
334In Stock
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247AD-3
IXYS IGBTs TO268 3KV 12A BIMOSFET
Datasheet
277In Stock
Min.: 1
Mult.: 1

IGBT Transistors Si SMD/SMT D3PAK-3 (TO-268-3)


IXYS IGBTs Disc IGBT BiMSFT-VeryHiVolt TO-247AD
Datasheet
127In Stock
Min.: 1
Mult.: 1
IGBT Transistors Si Through Hole TO-247HV-3
IXYS IGBTs TO268 2500V 2A IGBT
Datasheet
8In Stock
720Expected 2026-03-11
Min.: 1
Mult.: 1

IGBT Transistors Si SMD/SMT TO-247-3
IXYS IGBTs TO264 3KV 55A BIMOSFET
Datasheet
1,275Expected 2026-07-22
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-264-3

IXYS IGBTs TO247 3KV 12A IGBT
Datasheet
300Expected 2026-04-01
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
IXYS IGBTs Disc IGBT BiMSFT-VeryHiVolt I4-PAK ISO+
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

IGBT Transistors Si Through Hole ISOPLUS i4-3
IXYS IGBTs ISOPLUS 3KV 22A IGBT
Datasheet
Non-Stocked Lead-Time 34 Weeks
Min.: 300
Mult.: 25

IGBT Transistors Si Through Hole ISOPLUS i4-3
IXYS MOSFETs ISOPLUS 3KV 24A DIODE
Datasheet
Non-Stocked Lead-Time 57 Weeks
Min.: 300
Mult.: 25

MOSFETs Si Through Hole ISOPLUS-i4-PAK-3
IXYS IGBTs High Voltage High Gain BIMOSFET
Datasheet
Non-Stocked Lead-Time 57 Weeks
Min.: 300
Mult.: 25

IGBT Transistors Si Through Hole ISOPLUS i4-PAC-3
IXYS IGBTs TO247 3KV 10A IGBT
Datasheet
Non-Stocked Lead-Time 57 Weeks
Min.: 300
Mult.: 30

IGBT Transistors Si Through Hole TO-247HV-3
IXYS IGBTs BIMOSFET 2500V 75A
Datasheet
Non-Stocked Lead-Time 80 Weeks
Min.: 300
Mult.: 25

IGBT Transistors Si Through Hole TO-264-3
IXYS IGBTs 3600V/92A Rev Conducting IGBT
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 25
Mult.: 25

IGBT Transistors Si Through Hole ISOPLUS i5-PAC-3
IXYS IGBTs MOSFET 2500V 46A ISOPLUS I5-PAK
Datasheet
Non-Stocked Lead-Time 57 Weeks
Min.: 300
Mult.: 25

IGBT Transistors Si Through Hole ISOPLUS i5-PAC-3