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UF4SC120023B7S

Name: onsemi UF4SC120023B7S
Brand: onsemi
SKU: 772-UF4SC120023B7S
Price: 37.21 CAD
Availability: InStock

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Mouser #:

772-UF4SC120023B7S

Mfr. #:

UF4SC120023B7S

Mfr.:

onsemi

Description:

SiC MOSFETs 1200V/23MOSICFETG4TO263-7

Datasheet:

UF4SC120023B7S Datasheet

ECAD Model:

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Learn more about onsemi UF4SC120023B7S

In Stock: 1,081

Stock:: 1,081 Can Ship Immediately

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Factory Lead-Time:: 28 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$37.21	$37.21
	$27.12	$271.20
	$27.11	$2,711.00
	$25.33	$12,665.00
Full Reel (Order in multiples of 800)
	$25.33	$20,264.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	72 A
Rds On - Drain-Source Resistance:	23 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	6 V
Qg - Gate Charge:	37.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	385 W
Channel Mode:	Enhancement
Tradename:	SiC FET
Brand:	onsemi
Configuration:	Single
Fall Time:	10 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC FET
Product Type:	SiC MOSFETS
Rise Time:	25 ns
Series:	UF4SC
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	64 ns
Typical Turn-On Delay Time:	23 ns

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Datasheet

UF4SC120023B7S Datasheet

PCN

Product Change Notification 2025-9-26 (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

UF4SC120023B7S G4 Silicone Carbide (SiC) FETs

onsemi UF4SC120023B7S G4 Silicone Carbide (SiC) FETs are 1200V, 23mΩ devices based on a unique cascode circuit configuration. A normally-on SiC JFET is co-packaged in this configuration with a Si MOSFET, producing a normally-off SiC FET device. The device’s standard gate-drive characteristics allow the use of off-the-shelf gate drivers, thus requiring minimal re-design when replacing Si IGBTs, Si super junction devices, or SiC MOSFETs. Available in a space-saving D2PAK-7L package (enabling automated assembly), these devices exhibit an ultra-low gate charge and exceptional reverse recovery characteristics. onsemi UF4SC120023B7S G4 SiC FETs are ideal for switching inductive loads and applications requiring a standard gate drive.