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NTTFS1D8N02P1E

Name: onsemi NTTFS1D8N02P1E
Brand: onsemi
SKU: 863-NTTFS1D8N02P1E
Price: 4.96 CAD
Availability: InStock

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Mouser #:

863-NTTFS1D8N02P1E

Mfr. #:

NTTFS1D8N02P1E

Mfr.:

onsemi

Description:

MOSFETs FET 25V 1.8 MOHM PC33 SINGLE

Datasheet:

NTTFS1D8N02P1E Datasheet

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In Stock: 501

Stock:: 501 Can Ship Immediately

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Factory Lead-Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$4.96	$4.96
	$3.24	$32.40
	$2.26	$226.00
	$1.92	$960.00
	$1.84	$1,840.00
Full Reel (Order in multiples of 3000)
	$1.80	$5,400.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PQFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	150 A
Rds On - Drain-Source Resistance:	1.3 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	17.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	46 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Product Type:	MOSFETs
Series:	NTTFS1D8N02P1E
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	122.136 mg

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Datasheet

NTTFS1D8N02P1E Datasheet

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NTTFS1D8N02P1E N-Channel Power MOSFET

onsemi NTTFS1D8N02P1E N-Channel Power MOSFET features a compact design and good thermal performance. This MOSFET offers low drain-to-source resistance (R_DS(on)) to minimize conduction losses and low total gate charge (Q_G) and capacitance to minimize driver losses. onsemi NTTFS1D8N02P1E MOSFET provides 25V drain-to-source voltage (V_(BR)DSS) and 150A maximum drain current (I_D). Typical applications include DC-DC converters, power load switches, notebook battery management, motor control, secondary rectification, battery management, and Point of Load (POL).