SICW0x 1200V SiC N-Channel MOSFETs

Micro Commercial Components (MCC) SICW0x 1200V SiC N-Channel MOSFETs amplify performance in versatile TO-247-4, TO-247-4L, and TO-247AB packages. These MOSFETs feature high switching speed with low gate charge, design flexibility, and reliability. The SICW0x 1200V SiC MOSFETs include a 21mΩ to 120mΩ typical wide on-resistance range and reliable performance. These SiC MOSFETs deliver superior thermal properties and a fast intrinsic diode to ensure smooth, efficient operation in challenging conditions. The SICW0x SiC MOSFETs are available in 3-pin and 4-pin (Kelvin source) configurations. Typical applications include motor drives, welding equipment, power supplies, renewable energy systems, charging infrastructure, cloud systems, and Uninterruptible Power Supply (UPS).

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Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Micro Commercial Components (MCC) SiC MOSFETs SiC MOSFET,TO-247AB
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 1,800
Mult.: 1,800
Through Hole TO-247AB-3 N-Channel 1 Channel 1.2 kV 100 A 33.6 mOhms - 10 V, + 22 V 3 V 200 nC - 55 C + 175 C 469 W Enhancement
Micro Commercial Components (MCC) SiC MOSFETs SiC MOSFET,TO-247-4L
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 1,800
Mult.: 1,800
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 100 A 33.6 mOhms - 10 V, + 22 V 3 V 200 nC - 55 C + 175 C 469 W Enhancement