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SIHR080N60E-T1-GE3

Name: Vishay SIHR080N60E-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SIHR080N60ET1GE3
Price: 10.58 CAD
Availability: InStock

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Mouser #:

78-SIHR080N60ET1GE3

Mfr. #:

SIHR080N60E-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-CHANNEL 600V

Datasheet:

SIHR080N60E-T1-GE3 Datasheet

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In Stock: 2,167

Stock:: 2,167 Can Ship Immediately

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$10.58	$10.58
	$7.40	$74.00
	$5.63	$563.00
	$5.33	$5,330.00
Full Reel (Order in multiples of 2000)
	$5.33	$10,660.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PowerPAK-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	51 A
Rds On - Drain-Source Resistance:	74 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 W
Channel Mode:	Enhancement
Tradename:	PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	31 ns
Forward Transconductance - Min:	4.6 S
Product Type:	MOSFETs
Rise Time:	96 ns
Series:	SIHR E
Factory Pack Quantity:	2000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	31 ns

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Datasheet

SIHR080N60E-T1-GE3 Datasheet

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SiHR080N60E N-Channel Power MOSFET

Vishay / Siliconix SiHR080N60E N-Channel Power MOSFET is a fourth-generation 600V E series power MOSFET in a PowerPAK® 8 x 8LR package. The MOSFET provides higher efficiency and power density for telecom, industrial, and computing applications. The SiHR080N60E features a low typical on-resistance of 0.074Ω at 10V and ultra-low gate charge down to 42nC, resulting in reduced conduction and switching losses, which save energy and increase efficiency in power systems >2kW. The package also provides a Kelvin connection for improved switching efficiency. The Vishay / Siliconix SiHR080N60E is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.