R6049YN N-Channel Power MOSFETs

ROHM Semiconductor R6049YN N-Channel Power MOSFETs offer high-speed switching and low-on resistances for switching applications. Operating in a -55°C to +150°C temperature range, these single-channel enhancement mode devices feature a 600V drain-source breakdown voltage, a ±22A or ±49A continuous drain current, and a 65nC total gate charge. The ROHM R6049YN N-Channel Power MOSFETs are available in TO-220AB-3, TO-220FM-3, and TO-247G-3 package options.

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Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
ROHM Semiconductor MOSFETs Nch 600V 49A, TO-220AB, Power MOSFET: R6049YNX3 is a power MOSFET with low on - resistance, suitable for switching.
Datasheet
1,253In Stock
1,000Expected 2026-09-14
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 49 A 82 mOhms - 30 V, 30 V 6 V 65 nC - 55 C + 150 C 448 W Enhancement Tube
ROHM Semiconductor MOSFETs Nch 600V 22A, TO-220FM, Power MOSFET: R6049YNX is a power MOSFET with low on - resistance, suitable for switching.
Datasheet
1,964In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 22 A 82 mOhms - 30 V, 30 V 6 V 65 nC - 55 C + 150 C 90 W Enhancement Tube
ROHM Semiconductor MOSFETs Nch 600V 49A, TO-247G, Power MOSFET: R6049YNZ4 is a power MOSFET with low on - resistance, suitable for switching.
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247G-3 N-Channel 1 Channel 600 V 49 A 82 mOhms - 30 V, 30 V 6 V 65 nC - 55 C + 150 C 448 W Enhancement Tube