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TK110Z65Z,S1F

Name: Toshiba TK110Z65Z,S1F
Brand: Toshiba
SKU: 757-TK110Z65ZS1F
Price: 17.93 CAD
Availability: InStock

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Mouser #:

757-TK110Z65ZS1F

Mfr. #:

TK110Z65Z,S1F

Mfr.:

Toshiba

Description:

MOSFETs POWER MOSFET TRANSISTOR TO-247 PD=190W F=1MHZ

Datasheet:

TK110Z65Z,S1F Datasheet (PDF)

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Learn more about Toshiba TK110Z65Z,S1F

In Stock: 40

Stock:: 40 Can Ship Immediately

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Factory Lead-Time:: 37 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$17.93	$17.93
	$11.03	$110.30
	$9.36	$936.00
	$8.09	$4,045.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	24 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	18 ns
Factory Pack Quantity:	25
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	90 ns
Typical Turn-On Delay Time:	45 ns
Unit Weight:	6 g

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Datasheet

TK110Z65Z,S1F Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Data

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Not available
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R_DS(on) makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

TK110Z65Z Silicon N-Channel DTMOSIV Series MOSFET

Toshiba TK110Z65Z Silicon N-Channel DTMOSIV Series MOSFET features a low 0.092Ω (typical) drain-source on-resistance, high-speed switching properties, and low capacitance. The TK110Z65Z also features an enhancement mode making it ideal for use in switching power supply applications.