It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

TK110Z65Z,S1F

Name: Toshiba TK110Z65Z,S1F
Brand: Toshiba
SKU: 757-TK110Z65ZS1F
Price: 10.46 CAD
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser #:

757-TK110Z65ZS1F

Mfr. #:

TK110Z65Z,S1F

Mfr.:

Toshiba

Description:

MOSFETs POWER MOSFET TRANSISTOR TO-247-4L PD=190W F=1MHZ

Datasheet:

TK110Z65Z,S1F Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about Toshiba TK110Z65Z,S1F

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 40
Factory Lead-Time:: 21

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$10.46	$10.46
	$6.17	$61.70
	$5.13	$513.00
	$4.40	$2,200.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	24 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	18 ns
Factory Pack Quantity:	25
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	90 ns
Typical Turn-On Delay Time:	45 ns
Unit Weight:	6 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TK110Z65Z,S1F Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Data

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R_DS(on) makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

TK110Z65Z Silicon N-Channel DTMOSIV Series MOSFET

Toshiba TK110Z65Z Silicon N-Channel DTMOSIV Series MOSFET features a low 0.092Ω (typical) drain-source on-resistance, high-speed switching properties, and low capacitance. The TK110Z65Z also features an enhancement mode making it ideal for use in switching power supply applications.