(800) 346-6873

Part of the TTI Family of Specialists Contact Mouser (Kitchener) (800) 346-6873 Feedback

Change Location

In Stock

RoHS

Mfr.	Mfr. #:	Qty	Ext Total

View Cart

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

GP2T020A120H

Name: SemiQ GP2T020A120H
Brand: SemiQ
SKU: 148-GP2T020A120H
Price: 31.03 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

148-GP2T020A120H

Mfr. #:

GP2T020A120H

Mfr.:

SemiQ

Description:

SiC MOSFETs 1200V, 18mOhm, TO-247-4L MOSFET

Datasheet:

GP2T020A120H Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about SemiQ GP2T020A120H

In Stock: 48

Stock:: 48 Can Ship Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$31.03	$31.03
	$25.53	$255.30
	$22.07	$2,648.40
1,020	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	119 A
Rds On - Drain-Source Resistance:	18 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	216 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	564 W
Channel Mode:	Enhancement
Brand:	SemiQ
Configuration:	Single
Fall Time:	19 ns
Forward Transconductance - Min:	26 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	5 ns
Series:	GP2T020A120
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	38 ns
Typical Turn-On Delay Time:	17 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GP2T020A120H Datasheet (PDF)

CAHTS:: 8541290000
CNHTS:: 8541100000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

GP2T020A120H 1200V SiC MOSFET

SemiQ GP2T020A120H 1200V SiC MOSFET can be combined with silicon carbide Schottky diodes to achieve optimal performance without the trade-offs made with Silicon devices. This MOSFET offers reduced switching losses, higher efficiency, reduced heat sink size, and increased power density. The GP2T020A120H MOSFET features high-speed switching, longer creepage distance, 564W power dissipation, and 800mJ single pulse avalanche energy. This MOSFET is ideal for designers working on EV charging, industrial controls, and HVAC systems. Typical applications include power factor correction, DC-DC converter primary switching, and synchronous rectification.