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RS1G201ATTB1

Name: ROHM Semiconductor RS1G201ATTB1
Brand: ROHM Semiconductor
SKU: 755-RS1G201ATTB1
Price: 2.74 CAD
Availability: InStock

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Mouser #:

755-RS1G201ATTB1

Mfr. #:

RS1G201ATTB1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs HSOP8 P-CH 40V 20A

Datasheet:

RS1G201ATTB1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RS1G201ATTB1

In Stock: 6,413

Stock:: 6,413 Can Ship Immediately

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Factory Lead-Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$2.74	$2.74
	$2.62	$26.20
	$2.51	$251.00
	$2.20	$1,100.00
	$2.03	$2,030.00
Full Reel (Order in multiples of 2500)
	$1.78	$4,450.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	HSOP-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	78 A
Rds On - Drain-Source Resistance:	5.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	130 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	250 ns
Product Type:	MOSFETs
Rise Time:	98 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 P Channel
Typical Turn-Off Delay Time:	330 ns
Typical Turn-On Delay Time:	24 ns
Part # Aliases:	RS1G201AT
Unit Weight:	771.020 mg

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Datasheet

RS1G201ATTB1 Datasheet

Application Notes

Application Note (PDF)

Specification Sheets

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

RS1G201ATTB1 Power MOSFET

ROHM Semiconductor RS1G201ATTB1 Power MOSFET features Pb-free plating, low on-resistance, and HSOP8 small surface-mount package. This MOSFET operates at -55°C to 150°C temperature range, -40V drain-source voltage, ±80A pulsed drain current, and ±20V gate-source voltage. The RS1G201ATTB1 power MOSFET is ideal for use in load switching.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.