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TGS2355

Name: Qorvo TGS2355
Brand: Qorvo
SKU: 772-TGS2355
Price: 229.03 CAD
Availability: OutOfStock

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Mouser #:

772-TGS2355

Mfr. #:

TGS2355

Mfr.:

Qorvo

Description:

RF Switch ICs .5-6GHz SPDT 100 Watt GaN

Datasheet:

TGS2355 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Qorvo TGS2355

Availability

Stock:: Non-Stocked

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Factory Lead-Time:: 12 Weeks Estimated factory production time.

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Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$229.03	$11,451.50
100	Quote

Alternative Packaging

Mfr. Part #:

TGS2355-SM

Packaging:

Tray

Availability:

In Stock

Price:

$332.72

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	RF Switch ICs
RoHS:
Switch Configuration:	SPDT
Minimum Frequency:	500 MHz
Maximum Frequency:	6 GHz
Insertion Loss:	1.3 dB
Off Isolation - Typ:	40 dB
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package / Case:	Die
Technology:	Si
Series:	TGS2355
Packaging:	Gel Pack
Brand:	Qorvo
High Control Voltage:	- 48 V
Number of Switches:	Single
Operating Supply Current:	1 mA
Pd - Power Dissipation:	36.8 W
Product Type:	RF Switch ICs
Factory Pack Quantity:	50
Subcategory:	Wireless & RF Integrated Circuits
Part # Aliases:	1097157
Unit Weight:	1 g

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5-0810-13

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Datasheet

TGS2355 Datasheet (PDF)

PCN

Product Change Notification (PDF)

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CAHTS:: 8542390000
CNHTS:: 8542399000
USHTS:: 8542390090
JPHTS:: 854239099
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

TGS2355 High Power GaN Switch

Qorvo TGS2355 High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch fabricated on Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25). Operating from 0.5GHz to 6.0GHz, the TGS2355 provides up to 100W input power handling with <1dB insertion over most of the operating band and greater than 40dB isolation.