CMPA2735030S

Name: MACOM CMPA2735030S
Brand: MACOM
SKU: 941-CMPA2735030S
Price: 469.11 CAD
Availability: InStock

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Mouser #:

941-CMPA2735030S

Mfr. #:

CMPA2735030S

Mfr.:

MACOM

Description:

RF Amplifier MMIC, GaN HEMT, G50V3-1C, 30W, 2.7-3.5GH

Datasheet:

CMPA2735030S Datasheet (PDF)

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In Stock: 40

Stock:: 40 Can Ship Immediately

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Factory Lead-Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$469.11	$469.11
	$420.19	$4,201.90
Full Reel (Order in multiples of 25)
	$411.54	$10,288.50
100	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	RF Amplifier
RoHS:
Operating Frequency:	2.7 GHz to 3.5 GHz
Gain:	28.1 dB
Mounting Style:	SMD/SMT
Package / Case:	QFN-32
Technology:	GaN
Maximum Operating Temperature:	+ 225 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	MACOM
Moisture Sensitive:	Yes
Pd - Power Dissipation:	32 W
Product Type:	RF Amplifier
Factory Pack Quantity:	25
Subcategory:	Wireless & RF Integrated Circuits

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Datasheet

CMPA2735030S Datasheet (PDF)

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USHTS:: 8542330001
TARIC:: 8542330000
ECCN:: EAR99

CMPA2735030S 30W GaN MMIC Power Amplifier

MACOM CMPA2735030S 30W 2.7GHz to 3.5GHz GaN MMIC Power Amplifier is a High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). The CMPA2735030S gallium nitride (GaN) Amp offers excellent benefits compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. Additionally, the GaN HEMTs provide greater power density and wider bandwidths compared to Si and GaAs transistors.