TGS2355-SM

Qorvo
772-TGS2355-SM
TGS2355-SM

Mfr.:

Description:
RF Switch ICs .5-6GHz SPDT 100 Watt GaN

ECAD Model:
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In Stock: 229

Stock:
229 Can Ship Immediately
Factory Lead-Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$332.72 $332.72
$248.93 $2,489.30
500 Quote

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Switch ICs
RoHS:  
SPDT
500 MHz
6 GHz
1.1 dB
40 dB
- 40 C
+ 85 C
SMD/SMT
QFN-32
Si
TGS2355
Tray
Brand: Qorvo
High Control Voltage: - 48 V
Moisture Sensitive: Yes
Number of Switches: Single
Operating Supply Current: 1 mA
Pd - Power Dissipation: 35 W
Product Type: RF Switch ICs
Factory Pack Quantity: 50
Subcategory: Wireless & RF Integrated Circuits
Part # Aliases: TGS2355 1097064
Unit Weight: 5.058 g
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CAHTS:
8542390000
CNHTS:
8542399000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399999
ECCN:
EAR99

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

TGS2355-SM High Power GaN Switch

Qorvo TGS2355-SM High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch that operates from 0.5GHz to 6.0GHz. Fabricated on Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25), the TGS2355-SM provides up to 100W input power handling with <1.1dB insertion loss over most of the operating band and greater than 40dB isolation. These qualities make the TGS2355-SM GaN Switch ideal for high-power switching applications across both defense and commercial platforms.