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NTT2016N065M3S

Name: onsemi NTT2016N065M3S
Brand: onsemi
SKU: 863-NTT2016N065M3S
Price: 15.08 CAD
Availability: OutOfStock

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See Product Specifications

Mouser #:

863-NTT2016N065M3S

Mfr. #:

NTT2016N065M3S

Mfr.:

onsemi

Description:

SiC MOSFETs EliteSiC, 16 mohm, 650 V, M3S,T2PAK industrial grade

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTT2016N065M3S Datasheet (PDF)

ECAD Model:

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More Information

Learn more about onsemi NTT2016N065M3S

Availability

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4,000

Can Ship in 20 Days
On Order:: 600

Expected 2026-02-17
Factory Lead-Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$15.08	$15.08
	$11.44	$114.40
	$9.53	$953.00
	$8.49	$4,245.00
Full Reel (Order in multiples of 800)
	$7.94	$6,352.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	T2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	85 A
Rds On - Drain-Source Resistance:	23.4 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 22 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	100 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	333 W
Channel Mode:	Enhancement
Brand:	onsemi
Configuration:	Single
Fall Time:	10.5 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFET
Product Type:	SiC MOSFETS
Rise Time:	17 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	54 ns
Typical Turn-On Delay Time:	25 ns

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Datasheet

NTT2016N065M3S Datasheet (PDF)

ECCN:: EAR99

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.