CG2H40xx & CG2H30xx GaN HEMTs

MACOM CG2H40xx and CG2H30xx Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to operate from a 28V rail. These transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities make these HEMTs ideal for linear and compressed amplifier circuits. MACOM CG2H40xx and CG2H30xx transistors offer design flexibility with a wide variety of package types, including screw-down, solder-down, pill, and flange. Typical applications include broadband amplifiers, cellular infrastructure, and radar.

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Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
MACOM GaN FETs GaN HEMT DC-8.0GHz, 10 Watt
Datasheet
902In Stock
Min.: 1
Mult.: 1

Screw Mount 440166 N-Channel 120 V 1.5 A - 2.7 V - 40 C + 150 C
MACOM GaN FETs 70W, DC-4.0GHz, 28V, RF Power GaN HEMT
Datasheet
32In Stock
60Expected 2026-04-27
Min.: 1
Mult.: 1

Screw Mount 440224 N-Channel 120 V 12 A - 3.8 V - 40 C + 150 C
MACOM GaN FETs GaN HEMT DC-4.0GHz, 45 Watt
Datasheet
640In Stock
Min.: 1
Mult.: 1

Screw Mount 440193 N-Channel 120 V 6 A - 3.8 V - 40 C + 150 C
MACOM GaN FETs GaN HEMT
Datasheet
350In Stock
Min.: 1
Mult.: 1

Screw Mount 440223 N-Channel 125 V 18 A - 3.8 V - 40 C + 150 C 150 W
MACOM GaN FETs GaN HEMT DC-6.0GHz, 25 Watt
Datasheet
815Expected 2026-03-30
Min.: 1
Mult.: 1

Screw Mount 440166 N-Channel 120 V 3 A - 3.8 V - 40 C + 150 C