BSM300D12P2E001

ROHM Semiconductor
755-BSM300D12P2E001
BSM300D12P2E001

Mfr.:

Description:
MOSFET Modules 300A SiC Power Module

Datasheet:
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Learn more about ROHM Semiconductor BSM300D12P2E001

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
4
Expected 2026-02-17
Factory Lead-Time:
27
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$1,194.03 $1,194.03
$1,144.49 $13,733.88

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
Module
N-Channel
2 Channel
1.2 kV
300 A
- 6 V, + 22 V
2.7 V
- 40 C
+ 150 C
1.875 kW
BSMx
Bulk
Brand: ROHM Semiconductor
Configuration: Dual
Fall Time: 65 ns
Height: 15.4 mm
Length: 152 mm
Product Type: MOSFET Modules
Rise Time: 70 ns
Factory Pack Quantity: 4
Subcategory: Discrete and Power Modules
Type: SiC Power Module
Typical Turn-Off Delay Time: 250 ns
Typical Turn-On Delay Time: 80 ns
Vr - Reverse Voltage: 1.2 kV
Width: 62 mm
Unit Weight: 444.780 g
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Attributes selected: 0

CAHTS:
8541590000
CNHTS:
8504409100
USHTS:
8541590080
JPHTS:
854159000
TARIC:
8541590000
MXHTS:
8541500100
BRHTS:
85415020
ECCN:
EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

BSM300D12P2E001 SiC Power Module

ROHM Semiconductor BSM300D12P2E001 SiC Power Module is a half-bridge module consisting of a Silicon Carbide DMOSFET and a Silicon Carbide Schottky Barrier Diode. ROHM Semiconductor BSM300D12P2E001 SiC Power Module is designed for motor drives, inverter/converters, photovoltaics, energy harvesting, and induction heating equipment. It has low surge, low switching loss and high-speed switching are possible.

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