It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

IXFH46N65X2W

Name: IXYS IXFH46N65X2W
Brand: IXYS
SKU: 747-IXFH46N65X2W
Price: 15.72 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

747-IXFH46N65X2W

Mfr. #:

IXFH46N65X2W

Mfr.:

IXYS

Description:

MOSFETs 650V 69mohm 46A X2-Class HiPerFET in TO-247

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXFH46N65X2W Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about IXYS IXFH46N65X2W

In Stock: 551

Stock:: 551 Can Ship Immediately

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 29 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$15.72	$15.72
	$12.30	$123.00
	$10.24	$1,228.80
	$9.12	$4,651.20
	$8.12	$8,282.40

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	46 A
Rds On - Drain-Source Resistance:	69 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	5.5 V
Qg - Gate Charge:	90 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	660 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	24 S
Product Type:	MOSFETs
Rise Time:	21 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	53 ns
Typical Turn-On Delay Time:	28 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXFH46N65X2W Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

IXFH46N65X2W Power MOSFET

IXYS IXFH46N65X2W Power MOSFET is a 650V, 69mΩ, X2 Class HiPerFET™ power MOSFET developed using the charge compensation principle and proprietary process technology. This N-channel power MOSFET exhibits low on-state resistance and low gate charges, along with superior dv/dt performance. The IXFH46N65X2W MOSFET features high power density, and the avalanche capability enhances the device's ruggedness. In addition to the fast soft-recovery body diode, the ultra-junction MOSFET helps to reduce switching losses and Electro-Magnetic Interference (EMI). The IXFH46N65X2W MOSFET is used in switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, robotics, and servo control applications.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.