NDSH40120CDN

onsemi
863-NDSH40120CDN
NDSH40120CDN

Mfr.:

Description:
SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO247-3L

ECAD Model:
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In Stock: 1,198

Stock:
1,198 Can Ship Immediately
Factory Lead-Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$23.89 $23.89
$16.63 $166.30
$15.58 $1,869.60
$14.89 $7,593.90
$14.80 $15,096.00
2,520 Quote

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC Schottky Diodes
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3LD
Dual Anode Common Cathode
52 A
1.2 kV
1.36 V
123 A
2.39 uA
- 55 C
+ 175 C
NDSH40120CDN
Tube
Brand: onsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Pd - Power Dissipation: 217 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 30
Subcategory: Diodes & Rectifiers
Tradename: EliteSiC
Vr - Reverse Voltage: 1.2 kV
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Attributes selected: 0

CNHTS:
8541590000
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH40120CDN Silicon Carbide (SiC) Schottky Diode

onsemi NDSH40120CDN Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability than Silicon. The onsemi diode has no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.