It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

LSIC1MO170E0750

Name: IXYS LSIC1MO170E0750
Brand: IXYS
SKU: 576-LSIC1MO170E0750
Price: 12.87 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

576-LSIC1MO170E0750

Mfr. #:

LSIC1MO170E0750

Mfr.:

IXYS

Description:

SiC MOSFETs TO247 1.7KV 4.4A N-CH SIC

Datasheet:

LSIC1MO170E0750 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about IXYS LSIC1MO170E0750

In Stock: 1,927

Stock:: 1,927 Can Ship Immediately

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 29 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$12.87	$12.87
	$7.55	$75.50
	$6.42	$642.00
	$6.40	$2,880.00
10,350	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	6.2 A
Rds On - Drain-Source Resistance:	1 Ohms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	13 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	60 W
Channel Mode:	Enhancement
Brand:	IXYS
Packaging:	Tube
Product Type:	SiC MOSFETS
Series:	LSIC1MO
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

LSIC1MO170E0750 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

LSIC1MO170E0750 N-Channel SiC MOSFET

IXYS LSIC1MO170E0750 is a 750mΩ N-channel Silicon Carbide (SiC) MOSFET optimized for high-frequency and high-efficiency applications. The low gate resistance and ultra-low on-resistance make it suitable for high-frequency switching applications. This device features extremely low gate charge and output capacitance, as well as normally-off operations at all temperatures. The IXYS LSIC1MO170E0750 is suitable for a variety of applications that utilize high-frequency switching, such as switch-mode power supplies, solar inverters, UPS systems, high voltage DC-DC converters, and more.

SiC MOSFETs

Littelfuse SiC MOSFETs are optimized for high-frequency, high-efficiency applications. These robust SiC MOSFETs offer low gate charges, low output capacitance, and low gate resistance for high-frequency switching. These devices also feature extremely low drain-source on-state resistance. The low gate charge and on-resistance of these MOSFETs translate into lower conduction and switching losses, respectively. Littelfuse offers in-house designed, developed, and manufactured SiC MOSFETs with extremely low gate charge and output capacitance, industry-leading performance, and ruggedness at all temperatures. Littelfuse SiC MOSFETs are available in a range of varieties, including 1200V in 80mΩ, 120mΩ, and 160mΩ versions.