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SI6423ADQ-T1-GE3

Name: Vishay SI6423ADQ-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SI6423ADQ-T1-GE3
Price: 2.26 CAD
Availability: InStock

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Mouser #:

78-SI6423ADQ-T1-GE3

Mfr. #:

SI6423ADQ-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs TSSOP8 P-CH 20V 10.3A

Datasheet:

SI6423ADQ-T1-GE3 Datasheet

ECAD Model:

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In Stock: 5,749

Stock:: 5,749 Can Ship Immediately

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Factory Lead-Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.26	$2.26
	$1.43	$14.30
	$0.949	$94.90
	$0.742	$371.00
	$0.676	$676.00
Full Reel (Order in multiples of 3000)
	$0.591	$1,773.00
	$0.549	$3,294.00
	$0.525	$4,725.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TSSOP-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	12.5 A
Rds On - Drain-Source Resistance:	9.8 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	112 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.2 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Fall Time:	36 ns
Forward Transconductance - Min:	70 S
Product Type:	MOSFETs
Rise Time:	4 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Power MOSFET
Typical Turn-Off Delay Time:	120 ns
Typical Turn-On Delay Time:	12 ns
Unit Weight:	158 mg

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Datasheet

SI6423ADQ-T1-GE3 Datasheet

PCN

Technical Resources

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CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

Si6423ADQ P-Channel 20V MOSFET

Vishay / Siliconix Si6423ADQ P-Channel 20V MOSFET is offered in a TSSOP-8 package with a -20V drain-source voltage and 20mJ single pulse avalanche energy rating. This MOSFET features a single configuration design. It is halogen-free, RoHS compliant, and 100% R_g and UIS tested. Vishay Si6423ADQ P-Channel 20V MOSFET is designed for load switches, battery switches, and power management applications.