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FRDMGD3160HB8EVM

Name: NXP FRDMGD3160HB8EVM
Brand: NXP Semiconductors
SKU: 771-FRDMGD3160HB8EVM
Price: 862.65 CAD
Availability: OutOfStock

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Mouser #:

771-FRDMGD3160HB8EVM

Mfr. #:

FRDMGD3160HB8EVM

Mfr.:

NXP Semiconductors

Description:

Power Management IC Development Tools Half-Bridge Evaluation Board for P6 IGBT/SiC Modules

Datasheet:

FRDMGD3160HB8EVM Datasheet (PDF)

More Information

Learn more about NXP Semiconductors FRDMGD3160HB8EVM

Availability

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Factory Lead-Time:: 15 Weeks Estimated factory production time.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$862.65	$862.65

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	NXP
Product Category:	Power Management IC Development Tools
RoHS:	N
Product:	Evaluation Boards
Type:	Gate Driver
Input Voltage:	25 V
Tool Is For Evaluation Of:	GD3160
Series:	GD3160
Brand:	NXP Semiconductors
Product Type:	Power Management IC Development Tools
Factory Pack Quantity:	1
Subcategory:	Development Tools
Part # Aliases:	935437116598

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Datasheet

FRDMGD3160HB8EVM Datasheet (PDF)

USHTS:: 8471500150
TARIC:: 8473302000
ECCN:: EAR99

FRDM Development Boards

NXP Semiconductors FRDM Development Boards include low-cost, compact MCU and MPU boards with an easy development journey and an extensive ecosystem to simplify user designs. The FRDM ecosystem includes comprehensive software/tools, modular hardware, and access to solution-driven examples.

FRDMGD3160HB8EVM Evaluation Kit

NXP Semiconductors FRDMGD3160HB8EVM Evaluation Kit is a demonstration and development platform for the GD3160 Single-Channel Gate Drivers. The GD3160 Gate Drivers are designed to drive SiC and IGBT modules for xEV traction inverters, OBC, and DC-DC converters. The GD3160 features integrated galvanic isolation, a programmable interface via SPI, and advanced programmable protection options, such as over-temperature, desaturation, and current sense protection. The GD3160 Gate Drivers capably drive SiC MOSFETs and IGBT gates directly utilizing high-performance switching, low dynamic on-resistance, and rail-to-rail gate voltage control.