GT20N135SRA,S1E

Toshiba
757-GT20N135SRA,S1E
GT20N135SRA,S1E

Mfr.:

Description:
IGBTs DISCRET IGBT TRANSTR Vces=1350V Ic=40A

Datasheet:
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Learn more about Toshiba GT20N135SRA,S1E

In Stock: 57

Stock:
57 Can Ship Immediately
Factory Lead-Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$5.97 $5.97
$4.08 $40.80
$3.41 $409.20
$3.32 $1,693.20
$3.22 $3,284.40
$3.12 $7,862.40

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
1.35 kV
2.4 V
- 25 V, 25 V
40 A
312 W
- 55 C
+ 175 C
Tube
Brand: Toshiba
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 30
Subcategory: IGBTs
Unit Weight: 6.150 mg
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Attributes selected: 0

Datasheet

USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

GT20N135SRA Silicon N-Channel IGBT

Toshiba GT20N135SRA Silicon N-Channel IGBT is a 6.5th generation IGBT and consists of a Freewheeling Diode (FWD) monolithically integrated with an IGBT chip. This IGBT features a low saturation voltage of 1.60V and operates at a maximum of 175°C high junction temperature and 0.25µs of high-speed switching. The GT20N135SRA Silicon N-Channel IGBT is ideal for voltage-resonant inverter switching, soft switching, induction cooktops, and home appliance applications.

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