IRS2007STRPBF

Infineon Technologies
726-IRS2007STRPBF
IRS2007STRPBF

Mfr.:

Description:
Gate Drivers 200V half-bridge 0.6A,VCC & VBS UVLO

Datasheet:
ECAD Model:
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In Stock: 1,975

Stock:
1,975 Can Ship Immediately
Factory Lead-Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (CAD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$1.35 $1.35
$0.978 $9.78
$0.881 $22.03
$0.775 $77.50
$0.724 $181.00
$0.693 $346.50
$0.671 $671.00
Full Reel (Order in multiples of 2500)
$0.641 $1,602.50
$0.625 $3,125.00
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
IGBT, MOSFET Gate Drivers
Half-Bridge
SMD/SMT
SOIC-8
2 Driver
2 Output
600 mA
10 V
20 V
70 ns
30 ns
- 40 C
+ 125 C
IRS200X
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Logic Type: CMOS, LSTTL
Maximum Turn-Off Delay Time: 220 ns
Maximum Turn-On Delay Time: 220 ns
Moisture Sensitive: Yes
Off Time - Max: 220 ns
Operating Supply Current: 300 uA
Output Voltage: 10 V to 20 V
Pd - Power Dissipation: 625 mW
Product Type: Gate Drivers
Propagation Delay - Max: 220 ns
Shutdown: No Shutdown
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: EiceDRIVER
Unit Weight: 393.242 mg
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Compliance Codes
CAHTS:
8542390000
CNHTS:
8542399000
USHTS:
8542390090
MXHTS:
8542399901
ECCN:
EAR99
Origin Classifications
Country of Origin:
Germany
Assembly Country of Origin:
Malaysia
Country of Diffusion:
Germany
The country is subject to change at the time of shipment.

200V Level-Shift Gate Drivers

Infineon 200V Level-Shift Gate Drivers include 3-phase, half-bridge, or high- and low-side drivers for low (24V, 36V, and 48V) and medium voltage (60V, 80V, 100V, and 120V) motor control applications. The 3-phase product utilizes Infineon’s unique Silicon-On-Insulator (SOI) level-shift technology. This feature provides functional isolation, industry-leading negative VS robustness, and reduced level-shift losses. A solution with integrated Bootstrap Diodes (BSD) is also available to reduce BOM cost, simplify the layout, and reduce PCB size.

IRS2007 200-V Half-Bridge Drivers

Infineon Technologies IRS2007 200-V Half-Bridge Drivers are high voltage, high-speed power MOSFET drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration, which operates up to 200V. Propagation delays are matched to simplify the HVIC’s use in high-frequency applications.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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