PSMxN08NS1 N-Channel Enhancement Mode MOSFETs

PANJIT PSMxN08NS1 N-Channel Enhancement Mode MOSFETs utilize Trench technology to improve the product characteristics. These MOSFETs feature low drain-source on resistance and 80V drain-source voltage. The PSMxN08NS1 MOSFETs are 100% avalanche-tested, 100% Rg-tested, and lead-free in compliance with EU RoHS 2.0. These MOSFETs are ideal for use in Battery Management Systems (BMSs), Brushless Direct Current (BLDC) motors, SMPS, and telecommunications power systems.

Results: 4
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Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Panjit MOSFETs 80V 5.5mohm MV MOSFET
Datasheet
1,163In Stock
Min.: 1
Mult.: 1
Reel: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 108 A 5.5 mOhms - 20 V, 20 V 3.75 V 65.8 nC - 55 C + 150 C 113.6 W Enhancement Reel, Cut Tape
Panjit MOSFETs 80V 5.5mohm Tjmax 175C MV MOSFET
Datasheet
1,792In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 111 A 5.5 mOhms - 20 V, 20 V 3.75 V 65.8 nC - 55 C + 175 C 136 W Enhancement Tube
Panjit MOSFETs 80V 3.4mohm Tjmax 175C MV MOSFET
Datasheet
1,940In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 166 A 3.4 mOhms - 20 V, 20 V 3.75 V 103.5 nC - 55 C + 175 C 156 W Enhancement Tube
Panjit MOSFETs 80V 3.4mohm MV MOSFET
Datasheet
790In Stock
Min.: 1
Mult.: 1
Reel: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 161 A 3.4 mOhms - 20 V, 20 V 3.75 V 103.5 nC - 55 C + 150 C 156 W Enhancement Reel, Cut Tape