It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

BSS138WAHZGT106

Name: ROHM Semiconductor BSS138WAHZGT106
Brand: ROHM Semiconductor
SKU: 755-BSS138WAHZGT106
Price: 0.67 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

755-BSS138WAHZGT106

Mfr. #:

BSS138WAHZGT106

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Nch 60V 310mA, SOT-323, Small Signal MOSFET for Automotive AEC-Q101.

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

BSS138WAHZGT106 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about ROHM Semiconductor BSS138WAHZGT106

In Stock: 163

Stock:: 163

Can Ship Immediately

An unexpected error occurred. Please try again later.
On Order:: 3,000

Expected 2026-04-10
Factory Lead-Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$0.675	$0.68
	$0.508	$5.08
	$0.287	$28.70
	$0.193	$96.50
	$0.146	$146.00
Full Reel (Order in multiples of 3000)
	$0.13	$390.00
	$0.112	$672.00
	$0.104	$936.00
	$0.094	$2,256.00

Similar Product

Mfr.:

ROHM Semiconductor

Mfr. #:

R6002ENHTB1

Description:

MOSFETs SOP8 600V 1.7A N-CH MOSFET

Compare With Current Part

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-323-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	310 mA
Rds On - Drain-Source Resistance:	2.4 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	28 ns
Forward Transconductance - Min:	250 mS
Product Type:	MOSFETs
Rise Time:	5 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	3.5 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

BSS138WAHZGT106 Datasheet

Specification Sheets

Datasheet - Chinese (English language)

This functionality requires JavaScript to be enabled.

USHTS:: 8541210095
TARIC:: 8541210000
ECCN:: EAR99

BSS138WAHZG N-Ch 60V 310mA Small Signal MOSFET

ROHM Semiconductor BSS138WAHZG N-Ch 60V 310mA Small Signal MOSFET has various features to optimize performance and reliability. The ROHM Semiconductor BSS138WAHZG MOSFET has fast switching capability and ultra-low voltage drive at 2.5V. The device ensures efficient operation in various applications. Moreover, its ESD protection up to 2kV (HBM) enhances durability. Being Pb-free with RoHS compliance and halogen-free, it aligns with environmental standards. Additionally, its AEC-Q101 qualification makes it suitable for automotive applications.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.