UCC14130QDWNRQ1

Texas Instruments
595-UCC14130QDWNRQ1
UCC14130QDWNRQ1

Mfr.:

Description:
DC/DC Converters - SMD Automotive 1.5-W 1 2 -Vin to 15-Vin 12-

ECAD Model:
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In Stock: 1,609

Stock:
1,609
Can Ship Immediately
On Order:
750
Expected 2026-03-02
Factory Lead-Time:
18
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 750)

Pricing (CAD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$13.98 $13.98
$13.95 $69.75
$11.25 $112.50
$10.49 $262.25
$10.48 $524.00
$9.63 $963.00
$9.21 $2,302.50
Full Reel (Order in multiples of 750)
$8.80 $6,600.00
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: DC/DC Converters - SMD
RoHS:  
Isolated
2 Output
1.5 W
12 V
10 V
18 V
100 mA
3 kVAC
SSOP-36
12.93 mm
7.6 mm
3.55 mm
UCC14130
Brand: Texas Instruments
Dimensions: 12.93 mm x 7.6 mm x 3.55 mm
Input Voltage: 10 V to 18 V
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: Isolated
Factory Pack Quantity: 750
Subcategory: DC-DC Converters
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CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

UCC14130-Q1 Automotive Isolated DC/DC Module

Texas Instruments UCC14130-Q1 Automotive Isolated DC/DC Module is engineered to provide power to GaN, IGBT, SiC, or Si gate drivers. The UCC14130-Q1 integrates a transformer and DC/DC controller with a proprietary architecture to achieve high efficiency and low emissions. It can provide an isolated 12V output from a 12V regulated input for driving GaN and Si MOSFETs and an isolated 15V or 18V output from a 15V controlled input to bias the driver circuit for SiC MOSFET or IGBTs. The high accuracy provides better channel enhancement for higher system efficiency without over-stressing the power device gate.