FF450R33T3E3/_B5 XHP™ 3 IGBT Module

Infineon Technologies FF450R33T3E3/_B5 XHP™ 3 IGBT Module is a 3.3kV, 450A Dual Insulated Gate Bipolar Transistor Module with TRENCHSTOP™ IGBT3 and an emitter controlled diode. Designed specifically for high-power operations, the highly integrated XHP IGBT Modules cover the full-voltage range of IGBT chips from 3.3kV to 6.5kV. Sharing the same compact 140mm x 100mm x 40mm dimensions, these IGBT Modules allow for scalable design with best-in-class reliability and high power density. The FF450R33T3E3B5 IGBT module features enhanced isolation of 10.4kV.

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Qty. RoHS ECAD Model Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Pd - Power Dissipation
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Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Infineon Technologies IGBT Modules 3300 V, 450 A dual IGBT module
Datasheet
4In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 3.3 kV 2.5 V 450 A 400 nA 1 MW AG-XHP100-3 - 40 C + 150 C Tray
Infineon Technologies IGBT Modules XHP HV
Datasheet
Non-Stocked Lead-Time 13 Weeks
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 3.3 kV 2.5 V 450 A 400 nA 1 MW AG-XHP100-6 - 40 C + 150 C Tray