BSH205G2 20V P-Channel Trench MOSFET

Nexperia BSH205G2 20V P-Channel Trench MOSFET is an enhancement mode field-effect transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The device employs Trench MOSFET technology and offers a low threshold voltage with very fast switching. The BSH205G2 MOSFET is ideal for applications like relay drivers, high-speed line drivers and switching circuits.

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Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Nexperia MOSFETs SOT23 P-CH 20V 2.6A
Datasheet
2,351In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 3,000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 2.6 A 118 mOhms - 8 V, 8 V 900 mV 4.6 nC - 55 C + 175 C 1.3 W Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFETs SOT23 P-CH 20V 2.3A
Datasheet
38,699Expected 2027-02-08
MouseReel Available
Min.: 1
Mult.: 1
Reel: 3,000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 2.3 A 170 mOhms - 8 V, 8 V 450 mV 6.5 nC - 55 C + 150 C 890 mW Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFETs SOT23 P-CH 20V 2.3A
Datasheet
29,979Expected 2027-02-08
MouseReel Available
Min.: 1
Mult.: 1
Reel: 10,000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 2.3 A 170 mOhms - 8 V, 8 V 950 mV 6.5 nC - 55 C + 150 C 890 mW Enhancement Reel, Cut Tape, MouseReel