DRV8106S-Q1EVM

Texas Instruments
595-DRV8106S-Q1EVM
DRV8106S-Q1EVM

Mfr.:

Description:
Power Management IC Development Tools Automotive half-brid ge smart gate drive

In Stock: 1

Stock:
1 Can Ship Immediately
Factory Lead-Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 5
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$139.52 $139.52

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Power Management IC Development Tools
RoHS:  
Evaluation Modules
Gate Driver
4.9 V to 37 V
DRV8106S-Q1
DRV8106S
Brand: Texas Instruments
For Use With: Automotive Applications
Interface Type: SPI
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Product Type: Power Management IC Development Tools
Factory Pack Quantity: 1
Subcategory: Development Tools
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Attributes selected: 0

USHTS:
8473301180
TARIC:
8473302000
ECCN:
EAR99

DRV8106S-Q1EVM Gate Driver Evaluation Module

Texas Instruments DRV8106S-Q1EVM Gate Driver Evaluation Module (EVM) is designed to evaluate the DRV8106S-Q1, an integrated, automotive-qualified brushed DC motor driver. The DRV8106S-Q1 is a highly integrated half-bridge gate driver capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side. The Texas Instruments DRV8106S-Q1EVM has a half-bridge consisting of two N-channel MOSFETs that drive motors bi-directionally up to 15A RMS, 20A peak current. The evaluation module operates from a single power supply for the analog power and from the USB line for the digital power, which can be customized to be externally supplied. A negative 18V reverse battery protection circuit with a 20A RMS rated PI filter is provided to clean up the power supply input and protect against incorrect battery connections.