STGHU30M65DF2AG

STMicroelectronics
511-STGHU30M65DF2AG
STGHU30M65DF2AG

Mfr.:

Description:
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 540

Stock:
540
Can Ship Immediately
On Order:
600
Expected 2026-04-20
Factory Lead-Time:
15
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 600)

Pricing (CAD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$6.87 $6.87
$4.56 $45.60
$3.22 $322.00
Full Reel (Order in multiples of 600)
$2.59 $1,554.00
$2.42 $2,904.00
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
HU3PAK-7
SMD/SMT
Single
650 V
1.6 V
20 V
87 A
441 W
- 55 C
+ 175 C
AEC-Q101
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 57 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBTs
Factory Pack Quantity: 600
Subcategory: Transistors
Unit Weight: 2.320 g
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Attributes selected: 0

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

STGHU30M65DF2AG Automotive-Grade IGBT

STMicroelectronics STGHU30M65DF2AG Automotive-Grade IGBT is developed using an advanced trench gate field stop structure. The STMicroelectronics STGHU30M65DF2AG offers an ideal balance of inverter performance and efficiency, with low power loss and short-circuit protection. The positive VCE(sat) temperature coefficient and consistent parameter distribution enhance safe paralleling operation.