NXH010P90MNF1 SiC Module

onsemi NXH010P90MNF1 SiC Module contains a 10Mohm 900V SiC MOSFET half-bridge and an NTC thermistor in an F1 module. The module has a recommended gate voltage of 15V to 18V. The NXH010P90MNF1 has an improved RDS(ON) at a higher voltage and low thermal resistance.

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Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Series
Packaging
onsemi MOSFET Modules SiC Module, 2-PACK Half Bridge Topology, 900 V, 10 mohm SiC M2 MOSFET
Datasheet
8In Stock
Min.: 1
Mult.: 1
SiC Press Fit Module N-Channel 900 V 154 A 14 mOhms - 8 V, + 18 V - 40 C + 150 C 328 W NXH010P90MNF1 Tray
onsemi MOSFET Modules SiC Module, 2-PACK Half Bridge Topology, 900 V, 10 mohm SiC M2 MOSFET TIM option
Datasheet
28In Stock
Min.: 1
Mult.: 1

SiC Press Fit - 15 V, + 25 V - 40 C + 150 C NXH010P90MNF1 Tray