NSVT5551MR6T1G

onsemi
863-NSVT5551MR6T1G
NSVT5551MR6T1G

Mfr.:

Description:
Bipolar Transistors - BJT NPN GENERAL-PURPOSE AMPLIFIER

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.
More Information
Learn more about onsemi NSVT5551MR6T1G

In Stock: 2,441

Stock:
2,441 Can Ship Immediately
Factory Lead-Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$1.46 $1.46
$0.899 $8.99
$0.614 $61.40
$0.484 $242.00
$0.414 $414.00
Full Reel (Order in multiples of 3000)
$0.339 $1,017.00
$0.312 $1,872.00
$0.288 $2,592.00
$0.271 $6,504.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
TSOT-23-6
NPN
Dual
160 V
180 V
6 V
700 mW
300 MHz
+ 150 C
NSVT5551M
Reel
Cut Tape
Brand: onsemi
Continuous Collector Current: 600 mA
DC Collector/Base Gain hfe Min: 80 at 1 mA, 5 V
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

USHTS:
8541210075
TARIC:
8541210000
ECCN:
EAR99

NSVT5551M Bipolar Transistor

onsemi NSVT5551M Bipolar Transistor is an AEC-Q101 qualified NPN general-purpose low VCE(sat) amplifier. This NPN bipolar transistor has matched dies and operates at -55°C to 150°C storage temperature range. The NSVT5551M BJT Pb-free, halogen-free, BFR-free, and RoHS-compliant. This transistor is generally used for many different applications.

An unexpected error has occurred.


Have a question? Please visit the Help Center.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.